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| (R) SMP30-xxx Series TRISILTM FEATURES n n n n n BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 s. JEDEC REGISTERED PACKAGE OUTLINE SMA (JEDEC DO-214AA) SCHEMATIC DIAGRAM DESCRIPTION The SMP30-xxx series has been designed to protect telecommunication equipments against lightning surges and overvoltages induced by AC power lines. COMPLIES WITH THE FOLLOWING STANDARDS: (CCITT) ITU-K20 (CCITT) ITU-K17 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level BELLCORE TR-NWT-001089 Intra building lightning CNET l31-24 January 2000 - Ed: 5B Peak Surge Voltage (V) 1000 1500 2000 2000 level 2 level 3 1500 800 1000 2500 1000 5000 1500 1000 Voltage Waveform (s) 10/700 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 9/720 2/10 10/1000 2/10 2/10 0.5/700 Current Waveform (s) 5/310 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 2/10 0.8/310 Admissible Ipp (A) 25 38 40 50 25 50 65 50 25 125 30 125 100 25 Necessary Resistor () 10 15.5 8.0 15.0 23.3 15.0 1/6 SMP30-xxx Series ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol P IPP ITSM It dV/dt Tstg Tj TL 2 Parameter Power dissipation on infinite heatsink Peak pulse current Non repetitive surge peak on-state current I t value for fusing Critical rate of rise of off-state voltage Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm for case 2 Value Tamb = 50 C 10/1000 s 8/20 s tp = 20 ms tp = 20 ms VRM 3 30 60 15 1 5 - 55 to + 150 150 260 Unit W A A A2s kV/s C C C THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit with standard footprint dimension Parameter Value 30 120 Unit C/W C/W ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance 2/6 SMP30-xxx Series Type Marking IRM @ VRM max A V IR @ VR max note 1 A V VBO @ IBO max note 2 V mA IH C min typ typ note 3 note 4 note 5 mA pF SMP30-62 SMP30-68 SMP30-100 SMP30-120 SMP30-130 SMP30-180 SMP30-200 SMP30-220 SMP30-240 SMP30-270 Note 1: Note 2: Note 3: Note 4: Note 5: QAA QAB QAC QAD QAE QAF QAG QAH QAI QAJ 2 2 2 2 2 2 2 2 2 2 56 61 90 108 117 162 180 198 216 243 50 50 50 50 50 50 50 50 50 50 62 68 100 120 130 180 200 220 240 270 82 90 133 160 173 240 267 293 320 360 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 50 50 40 40 35 35 30 30 30 30 20 20 16 16 14 14 12 12 12 12 IR measured at VR guarantee VBRmin VR Measured at 50 Hz (1 cycle) - See test circuit 1. See test circuit 2. VR = 1V, F = 1MHz. VR = 50V, F = 1MHz TEST CIRCUIT 1 FOR IBO and VBO parameters : tp = 20ms Auto Transformer 220V/2A static relay. K R1 140 R2 240 220V Vout IBO measure Transformer 220V/800V 5A D.U.T V BO measure TEST PROCEDURE : n n Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 250 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 250 Volt - VOUT = 480 VRMS, R2 = 240 . 3/6 SMP30-xxx Series TEST CIRCUIT 2 for IH parameter. R D.U.T. VBAT = - 48 V Surge generator -V P This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : n 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within 50 ms max. 4/6 SMP30-xxx Series Fig. 1: Non repetitive surge peak on-sate current versus overload duration (Tj initial=25C). ITSM(A) 20 F = 50Hz Fig. 2: Relative variation of holding current versus junction temperature. IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 15 10 5 0 1E-2 1E-1 1E+0 t(s) 1E+1 1E+2 1E+3 -20 0 20 40 Tj(C) 60 80 100 120 Fig. 3: Relative variation of junction capacitance versus reverse applied voltage (typical values) Fig. 4: On-state voltage versus on-state current (typical values). C[VR]/C[VR=1V] 1.0 F = 1MHz IT(A) 50 Tj = 25C 0.5 20 10 5 0.2 2 0.1 1 10 VR(V) 100 300 1 0 1 2 3 4 5 6 VT(V) 7 8 9 10 Fig. 5: Variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)(CW) 1E+2 Fig. 6: Relative variation of VBO voltage versus junction temperature. Vbo[Tj]/Vbo[Tj=25C] 1.10 1.05 1E+1 1.00 1E+0 0.95 270 V 62 V 1E-1 1E-3 1E-2 1E-1 1E+0 tp(s) 1E+1 1E+2 5E+2 0.90 -40 -20 0 20 40 Tj(C) 60 80 100 5/6 SMP30-xxx Series ORDER CODE SMP 30 - 62 SURFACE MOUNT PROTECTION IPP = 30 A MARKING : Logo, Date Code, Part Number. PACKAGE MECHANICAL DATA SMA (JEDEC DO-214AA) VOLTAGE DIMENSIONS REF. Millimeters Min. A1 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 E1 D A2 b E c E A1 E1 C L A2 b D L FOOT PRINT (in millimeters) Weight: 0.06 g Packaging : Tape and reel. 1.65 1.45 2.40 1.45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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